CMOS工艺中NPN bipolar的开发

由于技术的迅速发展与突破,使集成电路的制造得以在短短的60年间,单一晶粒已经可以容纳数千万个电晶体的超大型集成电路。其主要工艺为CMOS工艺,原因是它有功耗低、集成度高、噪声低、抗辐射能力强等优点,但是传统bipolar工艺有频率高、功率大的优点,因此提出在CMOS中集成三极管、二极管。论述了在0.5μm CMOS工艺中集成NPN bipolar的方法以及各个关键技术指标的确定。

The Development of CMOS Technology in NPN Bipolar

Due to the rapid development of growth and breakthrough technology, the manufacture of integrated circuits in a short span of 60 years, single grain can accommodate tens of millions of transistors ultra large integrated circuit, and the main process of the CMOS process, because it has low power consumption, integration high, low noise, the advantages of strong ability of resisting radiation, but the traditional bipolar technology has the advantages of high frequency, power, so want to integration in the CMOS tube triode, diode. The paper discusses the method of integration of NPN bipolar in 0.5 μm CMOS process, the shutdown technology index.