Characteristics of Level Anticrossing in Parallel Electric and Magnetic Fields |
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| Authors: | GU SiHong LI BaiWen |
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| Institution: | 1. Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, The Chinese Academy of Sciences, Wuhan 430071, China;
2. Wuhan In stitute of Physics and Mathematics, The Chinese Academy of Sciences, Wuhan 430071, china;
3. CCAST (World Laboratory), P.O. Box 8730, Beijing 100080, China |
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| Abstract: | Using the matrix diagonalization method, we have studied two kinds of level anticrosing of Rydberg cesium atom in parallel electric and magnetic fields. Our numerical results reveal that in the vicinity position of level crossing between different parity states in a magnetic field, the energy levels and other behaviors of the states are quite sensitive to the electric field. We tabulate some features which may be as a guide in experimental verification. |
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| Keywords: | level anticrossing static field Rydberg atom |
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