Interface of anodic sulfide-oxide on n-type InSb |
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Authors: | Sun Weiguo |
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Institution: | (1) Luoyang Optoelectronic Institute, P.O. Box 030, 471009 Luoyang, Henan, PR China |
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Abstract: | A novel anodic sulfidization process for forming native sulfide-oxide films on n-type InSb is described. The results of Auger electron spectroscopy analysis indicate that native sulfide-oxide films are formed from aqueous sulfide solutions. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low fixed surface charge density of the order of 3×1010 cm–2 and small hysteresis. The native sulfide-oxide films leave the surface of n-type InSb practically at flatband and in this respect are superior to the passivation layers of anodic oxide and direct plasma SiN
x
. The interface between InSb and its native sulfide-oxide in combination with plasma CVD SiN
x
has excellent electrical properties. |
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Keywords: | 73 40 Qv 72 80 Ey 77 55 +f |
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