Conduction switching in aluminum nitride thin films containing Al nanocrystals |
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| Authors: | Y Liu T P Chen H W Lau L Ding M Yang J I Wong S Zhang Y B Li |
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| Institution: | (1) School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore;(2) Present address: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;(3) School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, 639798, Singapore |
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| Abstract: | Conduction switching, i.e., a sharp change in the conduction from a lower-conductance state to a higher-conductance state
or vice versa in aluminum nitride thin films embedded with Al nanocrystals (nc–Al) has been observed in the ramped-voltage and ramped-current current–voltage (I–V) measurements and the time-domain current measurement as well. Each state is well defined and its I–V characteristic follows a power law. It is observed that the conductance decreases (or increases) with charging (or discharging)
in the nc–Al. It is shown that the conduction switching is due to the charging and discharging in the nc–Al at certain strategic sites. With the connecting (or breaking) of some conductive tunneling paths formed by the uncharged
nc–Al due to the discharging (or charging) in the nc–Al at the strategic sites, a conduction switching occurs. |
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| Keywords: | PACS" target="_blank">PACS 73 22 -f 73 63 Bj 81 07 Bc |
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