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CBE growth of GaAs/GaAlAs HBTs using the new DEAlH-NMe3 precursor and all-gaseous dopants
Authors:P A Lane  C R Whitehouse  T Martin  M Houlton  G M Williams  A G Cullis  S S Gill  J R Dawsey  G Ball  B T Hughes  M A Crouch  M B Allenson
Institution:

DRA Electronics Division (RSRE), St. Andrews Road, Great Malvern, Worcestershire WR14 3PS, UK

Abstract:This paper describes the first reported use of diethylaluminium hydride-trimethylamine adduct (DEAlH-NMe3) for the growth of GaAs/GaAlAs power heterojunction bipolar transistors (HBTs) by chemical beam epitaxy (CBE). This precursor possesses a significantly higher vapour pressure than the more conventionally used triethylaluminium (TEA), and leads to much less stringent requirements for bubbler and gas-line heating, and also much-improved GaAs/GaAlAs heterojunction definition when no carrier gas is employed. The use of all-gaseous n- and p-type dopants offers significant technological advantages in CBE, and the current paper also provides the first report of the use of hydrogen sulphide for n-type doping of CBE-grown GaAlAs HBT emitter regions. In conclusion, DC and RF data obtained from the heterojunction bipolar transistors fabricated to date are described. A DC gain of 40 has already been measured and encouraging early data obtained from RF-probed devices are also presented.
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