Buckling analysis of pristine and defected graphene |
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| Affiliation: | 1. Center for Optimization and Reliability in Engineering (CORE), Department of Civil Engineering, Universidade Federal de Santa Catarina, Florianópolis, Brazil;2. NuMAT/PPGEM, Federal University of Technology of Parana, Curitiba, PR, Brazil;3. PPGMNE/CESEC, Federal University of Parana, Curitiba, PR, Brazil;1. National Research Council Postdoctoral Fellow, Washington, DC, USA;2. Marine Geosciences Division, Naval Research Laboratory, Washington, DC, USA;3. Material Science and Technology Division, Naval Research Laboratory, Washington, DC, USA;4. Marine Geosciences Division, Naval Research Laboratory, Stennis Space Center, MS, USA;1. Key Laboratory of Special Function Materials & Structure Design of the Ministry of Education, School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China;2. Laboratory of Clean Energy Chemistry and Materials, State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China;1. LUNAM Université, IFSTTAR, AME, LAE, F-44344 Bouguenais, France;2. Université Paris-Est, Laboratoire Navier (UMR 8205), CNRS, ENPC, IFSTTAR, F-77455 Marne-la-Vallée, France;1. Colllege of Science, China University of Petroleum (East China), Qingdao 266555, China;2. Department of Physics, Ocean University of China, Qingdao 266100, China;1. FEMTO-ST Institute, Université Bourgogne Franche-Comté, CNRS, 15B avenue des Montboucons, F-25030, Besançon, Cedex, France;2. Nanomedicine, Imagery and Therapeutics Lab, Université de Bourgogne Franche-Comté, 16 route de Gray, 25000, Besançon, France |
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| Abstract: | The buckling behavior of monolayer graphene (pristine and vacancy-defected) and bilayer graphene (pristine) loaded in the armchair direction was simulated for different boundary conditions using a truss FE model, representing the exact atomic lattice of graphene, and a FE model of an equivalent 2D plate. The critical buckling stress of pristine monolayer graphene was derived as a function of aspect ratio. The results from the two FE models coincide and are in very good agreement with established analytical solutions. With increasing the aspect ratio, the critical buckling stress of monolayer graphene decreases until the value of 2 from which the effect starts to diminish. Using the truss FE model, the effect of randomly dispersed vacancies on the critical buckling stress and buckling mode of monolayer graphene was studied. It was found that the critical buckling stress decreases dramatically with increasing the defect density: for a defect density of 10%, the critical buckling stress decreases by almost 50%. Moreover, the presence of defects was found to affect the highest buckling modes (above 3) even at low densities. Bilayer graphene has a totally different critical buckling stress than monolayer graphene due to the effect of van der Waals forces which depends on the applied boundary conditions. |
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| Keywords: | Graphene Buckling Finite element analysis Defects |
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