|
|||||
|
|
Origin of the peaked structure in the conductance of one-dimensional silicon accumulation layers |
|
| Authors: | Webb Hartstein Wainer Fowler |
| Abstract: | |
| Keywords: | |
| 本文献已被 PubMed 等数据库收录！ | |
|
||||||||||||||||
|
||||||||||||||||
|
||||||||||||||||
|
|
|
|
| 设为首页 | 免责声明 | 关于勤云 | 加入收藏 |
|
Copyright©北京勤云科技发展有限公司 京ICP备09084417号 |