Influence of nonequilibrium charge carrier recombination on the signal shape and magnitude in the photodeflection spectroscopy method under pulse excitation

A theory of signal shaping is proposed for semiconductor investigation by the method of photodeflection spectroscopy with pulse excitation that would take account of the influence of charge carrier recombination on the temperature distribution in the specimen. Quantitative computations are performed for silicon that demonstrate the change in PDS signal amplitude and shape when taking account of bulk carrier recombination. It is shown that taking account of the influence of bulk recombination discloses the possibility of obtaining additional quantitative information about the charge carrier lifetime in the specimen.Translated from Izvestiya Vysshikh Uchebnykh zavedenii, Fizika, No. 1, pp. 41–45, January, 1991.