| InP/GaP晶格失配界面的电特性 |
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| 引用本文： | 李果华,孙艳宁,Aristo Yulius,Jerry M.Woodall. InP/GaP晶格失配界面的电特性[J]. 人工晶体学报, 2007, 36(5): 1022-1025 |
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| 作者姓名： | 李果华 孙艳宁 Aristo Yulius Jerry M.Woodall |
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| 作者单位： | 江南大学理学院,无锡,214122;Department of Electrical Engineering,Yale University,New Haven,CT06520,USA;Department of Physics,Southern Connecticut State University,New Haven,CT 06515,USA |
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| 摘 要： | 本文研究了InP/GaP晶格失配界面的电特性。HRTEM图象表明在界面存在90°位错缺陷的应变缓释。ECV表明界面存在高密度载流子层。AFM图象表明本研究中获得了粗糙度为2.48nm的良好InP异质外延层。并对于InP界面给出了一个基于费米能级钉扎的模型来解释观察到的电性质。
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| 关 键 词： | 晶格失配 InP/GaP界面 缺陷 |
| 文章编号： | 1000-985X（2007）05-1022-04 |
| 修稿时间： | 2007-03-12 |
Electrical Properties Mismatched Interface between InP and GaP |
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| LI Guo-hua,SUN Yan-ning,Aristo Yulius,Christine C.Broadbridge,Jerry M.Woodall. Electrical Properties Mismatched Interface between InP and GaP[J]. Journal of Synthetic Crystals, 2007, 36(5): 1022-1025 |
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| Authors: | LI Guo-hua SUN Yan-ning Aristo Yulius Christine C.Broadbridge Jerry M.Woodall |
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| Affiliation: | 1. School of Science, Southern Yangtze University, Wuxi 214122, China; 2. Department of Electrical Engineering, Yale University, New Haven, CT 06520, USA; 3. Department of Physics, Southern Connecticut State University, New Haven, CT 06515, USA |
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| Abstract: | The electrical properties of the mismatched interface between InP and GaP have been investigatedted. High resolution transmission electron microscopy (HRTEM) image shows the presence of strain relieving,90°misfit dislocations at the InP/GaP interface. Electrochemical capacitance voltage(ECV)profiling indicates the presence of a high-density sheet of carriers at the interface. AFM image shows a pretty good InP epitaxial layer with surface roughness of 2.48nm has been obtained. A model based on Fermi-level pinning in InP at the interface by misfit dislocations is proposed to account for the observed electrical behavior. |
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| Keywords: | lattice mismatch InP/GaP interface dislocations |
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