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| 改进的升华法制备氮化铝单晶体 | |
| 引用本文： | 孙秀明,郑瑞生,鲁枫,武红磊,刘文,敬守勇. 改进的升华法制备氮化铝单晶体[J]. 人工晶体学报, 2007, 36(5): 1160-1165 |
| 作者姓名： | 孙秀明 郑瑞生 鲁枫 武红磊 刘文 敬守勇 |
| 作者单位： | 深圳大学光电子学研究所,深圳,518060;深圳大学光电子学研究所,深圳,518060;深圳大学光电子学研究所,深圳,518060;深圳大学光电子学研究所,深圳,518060;深圳大学光电子学研究所,深圳,518060;深圳大学光电子学研究所,深圳,518060 |
| 基金项目： | 国家自然科学基金;广东省自然科学基金 |
| 摘 要： | 采用改进的升华法在氮气环境下制备氮化铝单晶体.通过优化实验条件制备出了六角形的高质量的氮化铝单晶体.实验发现,在坩埚的不同区域得到的氮化铝晶体的大小和形态有所不同.讨论了温度梯度对氮化铝晶体尺寸大小和形态的影响. |
| 关 键 词： | 升华法 氮化铝单晶体 晶体形态 |
| 文章编号： | 1000-985X（2007）05-1160-06 |
| 修稿时间： | 2006-11-01 |
Growth of AIN Single Crystals by Modified Sublimation Method |
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| SUN Xiu-ming,ZHENG Rui-sheng,LU Feng,WU Hong-lei,LIU Wen,JING Shou-yong. Growth of AIN Single Crystals by Modified Sublimation Method[J]. Journal of Synthetic Crystals, 2007, 36(5): 1160-1165 | |
| Authors: | SUN Xiu-ming ZHENG Rui-sheng LU Feng WU Hong-lei LIU Wen JING Shou-yong |
| Affiliation: | Institute of Optoelectronics, Shenzhen University, Shenzhen 515060, China |
| Abstract: | AlN crystals were grown by modified sandwich sublimation method in nitrogen atmosphere. High quality AlN single crystals with typical hexagonal crystal habit were obtained by optimizing growth conditions. It was found that the AlN crystals which were grown on different regions in the crucible exhibit different crystal habits. The influence of the temperature gradient on the size and morphology of the crystals was discussed. |
| Keywords: | sublimation method AlN single crystal crystal morphology |
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