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脉冲式退火法对AZO薄膜性能的研究
引用本文:张松青,吴芳,张丽伟,高哲,王子健,卢景霄. 脉冲式退火法对AZO薄膜性能的研究[J]. 人工晶体学报, 2007, 36(5): 1182-1186
作者姓名:张松青  吴芳  张丽伟  高哲  王子健  卢景霄
作者单位:河南机电高等专科学校,新乡,453002;郑州大学材料物理教育部重点实验室,郑州,450052;郑州大学材料物理教育部重点实验室,郑州,450052;新乡学院,新乡,453000
基金项目:国家重点基础研究发展计划(973计划)
摘    要:用磁控溅射法在玻璃衬底上制备了掺铝氧化锌(AZO)薄膜,然后用脉冲式快速光热处火(PRTP)法对样品进行了600~800℃的退火处理.采用X射线衍射仪(XRD)、分光光度计、四探针等测试手段对AZO薄膜的结晶性能、透光率和导电性能进行了表征.结果表明:(1)薄膜退火后透光率基本维持在退火前(82~92;)的水平,而电阻率则由10-4Ω·cm 上升了1到6个数量级,已丧失了"导电膜"意义;(2)样品具有好的结构性能有利于提高样品的导电性能.对此现象进行了理论分析.

关 键 词:AZO薄膜  退火  透过率  电阻率
文章编号:1000-985X(2007)05-1182-05
修稿时间:2007-06-12

Research on the Properties of AZO Annealed by PRTP
ZHANG Song-qing,WU Fang,ZHANG Li-wei,GAO Zhe,WANG Zi-jian,LU Jing-xiao. Research on the Properties of AZO Annealed by PRTP[J]. Journal of Synthetic Crystals, 2007, 36(5): 1182-1186
Authors:ZHANG Song-qing  WU Fang  ZHANG Li-wei  GAO Zhe  WANG Zi-jian  LU Jing-xiao
Affiliation:1. Henan Mechanical and Electrical Engineering College, Xinxiang 453002, China ;2. Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China; 3, Xinxiang University, Xinxiang 453000, China
Abstract:ZnO:Al(AZO)thin films on glass were prepared by magnetron sputtering and subsequently annealed at 600℃ to 800℃ by pulsed rapid thermal processing (PRTP). The XRD, Spectrophotometer and Four-point probe instruments were employed to measure the crystallinity, transmittance and conductivity of the AZO films. The results show that,(1)the resistivity of AZO films one to six order of magnitude from 10-4Ω ·cm while the transmittance keeps the same level of 82-92% as before annealing.Those cannot be used as electrode in solar cells after annealing; (2) It is clear that the good structural properties benefits the conductivity of the sample. The phenomenon analyzed in theory.
Keywords:AZO thin films  anneal  transmittance  resistivity
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