Fast solid-phase crystallization of amorphous silicon films on glass using low-temperature multi-step rapid thermal annealing |
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| Authors: | Chang Woo Lee Choochon Lee Yong Tae Kim |
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| Affiliation: | (1) Department of Physics, Korea Advanced Institute of Science and Technology, P.O. Box 305-701, Taejon, Korea;(2) Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea |
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| Abstract: | Effects of multi-step rapid thermal annealing of plasma-deposited amorphous silicon films on Corning 7059 glass are investigated. A three-step rapid thermal annealing for 10 s/step at 730° C after film deposition reduces the activation energy of electrical conductivity for silicon films from 0.64 to 0.51 eV and causes (111) grain growth with a size of 1500 Å, which is determined using scanning electron microscopy, Raman spectroscopy and X-ray diffractometry. |
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| Keywords: | 72.60.+g 81.15.Gh 81.10.Jt |
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