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Study of silicon implanted with zinc and oxygen ions via Rutherford backscattering spectroscopy |
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| Authors: | V. V. Privezentsev V. S. Kulikauskas V. V. Zatekin D. V. Petrov A. V. Makunin A. A. Shemukhin A. V. Lutzau A. V. Putrik |
| Affiliation: | 1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, 117218, Russia 2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119998, Russia 3. NPP Pulsar, Moscow, 105187, Russia 4. Ural Federal University, Yekaterinburg, 620002, Russia |
| Abstract: | The structural features and dopant profiles of a Si surface layer implanted with Zn+ and O+ ions are studied via Rutherford backscattering spectroscopy based on the analysis of He2+-ion spectra with the use of the channeling technique. The doping-impurity redistribution is analyzed upon the formation of zinc-oxide nanoparticles. The sample surface morphology is examined by means of atomic-force microscopy and scanning electron microscopy under secondary-electron emission conditions. X-ray phase analysis of the implanted layers is carried out. |
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