| ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE |
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| 引用本文： | 吕劲,章立源,郝学军.ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE[J].中国物理 B,1997,6(1):40-51. |
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| 作者姓名： | 吕劲 章立源 郝学军 |
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| 作者单位： | Department of Physics, Peking University, Beijing 100871, China;Department of Physics, Peking University, Beijing 100871, China;Department of Physics, Peking University, Beijing 100871, China |
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| 基金项目： | Project supported by the National Education Foundation of China for Ph. D., the Computer Center of Peking University and the Beijing Institute of Modern Physics (BIMP) Computing Center of Peking University. |
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| 摘 要： | The effects of Pb doping, oxygen doping (δ= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg0.8Pb0.2Ba2Ca2Cu3O8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO2 layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed Tc(P) by Pb substitution has to be described in the modified Neumeier's model.
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