Characterization of partially dissipated solitons in a traveling-wave field-effect transistor |
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| Institution: | 1. School of Mathematics and Statistics, Chongqing University of Technology, Chongqing 400054, PR China;2. School of Mathematics Science, University of Electronic Science and Technology of China, Chengdu 610054, PR China;3. School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 610054, PR China;4. School of Mathematics and Computer Science, Yunnan University of Nationalities, Kunming 650031, PR China;1. Departamento de Matemáticas, Centro de Investigación de Física Teórica y Matemática FIMAT, University of Huelva, 21071 Huelva, Spain;2. Departamento de Matemática Aplicada II, E.S. Ingenieros, University of Sevilla, Camino de los Descubrimientos s/n, 41092 Sevilla, Spain;1. Department of Mathematics and Statistics, McGill University, 805 Sherbrooke W., Montréal, QC H3A 2K6, Canada;2. Centre de recherches mathématiques, Université de Montréal, C.P. 6128, succ. Centre-ville, Montréal, QC H3C 3J7, Canada;1. Monell Chemical Senses Center, 3500 Market Street, Philadelphia, PA 19104, USA;2. Institut de Mathématiques et de Sciences Physiques, B.P. 613, Porto-Novo, Benin;3. Nonlinear Dynamics, Chaos and Complex Systems Group, Departamento de Física, Universidad Rey Juan Carlos, Tulipán s/n, 28933 Móstoles, Madrid, Spain |
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| Abstract: | We investigate the Korteweg–de Vries equation with nonlinear dissipation, which becomes finite only for small field intensities. Using the perturbation theory based on the inverse scattering transform, we evaluate the amplitude and the phase of both one- and two-soliton solutions to show that large solitons can travel without significant amplitude decay over a long distance. We then develop a traveling-wave field-effect transistor (TWFET) that supports such partially dissipated solitons. Using both the numerical and experimental characterization of a TWFET, we validate the properties of partially dissipated solitons. |
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| Keywords: | Solitons Inverse scattering transform Field-effect transistors Reductive perturbation method |
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