Effect of gettering on the atomic structure of gallium arsenide |
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| Authors: | A A Va’polin A T Gorelenok V N Mdivani É A Il’ichev |
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| Institution: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) Federal State Unitary Enterprise, Lukin Research Institute of Physical Problems, Zelenograd, Moscow, 124460, Russia |
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| Abstract: | No changes in the lattice constant or standard parameters due to statistical displacements of atoms from their ideal positions at room temperature are revealed during a study of the atomic structure of gallium arsenide crystals gettered by yttrium. Nonetheless, the effect observed for conventional, ungettered crystals and associated with the influence of point defects on the phonon spectrum disappears. |
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