| 一种低导通电阻低转折电压的双通道分段阳极横向IGBT |
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| 引用本文： | 毛焜,乔明,张波,李肇基.一种低导通电阻低转折电压的双通道分段阳极横向IGBT[J].半导体学报,2014,35(5):054004-6. |
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| 作者姓名： | 毛焜 乔明 张波 李肇基 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science & Technology of China |
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| 摘 要： | A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF LDMOS （T-LDMOS） and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage （VST） and low specific on-resistance （Ron,sp） when the anode voltage （VA） is larger than VST. Secondly, a wide n-type anode and triple RESURF technology are used to get a low Ron,sp when VA is less than VST. Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time （Toff）. Experimental results show that： VST is only 0.9 V, Ron,sp （Ron × Area） are 11.7 and 3.6 Ω · mm^2 when anode voltage VA equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and Toff is only 450 ns.
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| 关 键 词： | 阳极电压 LIGBT 偏移电压 导通电阻 路径 传导 绝缘栅双极晶体管 RESURF |
| 修稿时间： | 1/7/2014 12:00:00 AM |
A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage |
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| Mao Kun,Qiao Ming,Zhang Bo and Li Zhaoji.A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage[J].Chinese Journal of Semiconductors,2014,35(5):054004-6. |
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| Authors: | Mao Kun Qiao Ming Zhang Bo and Li Zhaoji |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science &Technology of China, Chengdu, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science &Technology of China, Chengdu, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science &Technology of China, Chengdu, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science &Technology of China, Chengdu, China |
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| Abstract: | LIGBT segmented anode shift voltage specific on-resistance 800 V |
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| Keywords: | LIGBT segmented anode shift voltage specific on-resistance 800 V |
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