Dynamics and reactivity of positively charged muonium in heavily doped Si:B and comparisons with hydrogen |
| |
Authors: | Mansour A I Salman Z Chow K H Fan I King P J C Hitti B Jung J Cottrell S P |
| |
Institution: | Department of Physics, University of Alberta, Edmonton, Alberta, Canada T6G 2G7. amansour@phys.ualberta.ca |
| |
Abstract: | The detailed dynamics of the positively charged muonium (Mu+) in heavily doped p-type Si:B is reported. Below 200 K, Mu+ is static and isolated, and is located in a stretched Si-Si bond. Above approximately 200 K, Mu+ diffuses incoherently. At temperatures higher than 300 K, the Mu+-B- complex is formed while above 520 K, it starts to dissociate. There is significant enhancement of the diffusion of Mu+ in Si compared to H+ and D+-this is attributed to its smaller mass. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|