| 热处理工艺对室温制备ZnO:Al薄膜结构与光电性能的影响 |
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| 引用本文： | 任明放,王华,许积文,杨玲.热处理工艺对室温制备ZnO:Al薄膜结构与光电性能的影响[J].人工晶体学报,2009,38(5):1189-1192. |
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| 作者姓名： | 任明放 王华 许积文 杨玲 |
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| 作者单位： | 桂林电子科技大学信息材料科学与工程系,桂林,541004 |
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| 基金项目： | 广西高校百名中青年学科带头人资助计划项目(No.RC20060809014) |
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| 摘 要： | 采用室温溅射加后续退火工艺制备了ZnO∶ Al透明导电薄膜.研究了热处理工艺对薄膜微观结构和光电性能的影响.研究表明:退火有助于减小Al~(3+)对Zn~(2+)的取代造成的晶格畸变,消除应力,促进晶粒长大,有效提高电子浓度和迁移率,降低电阻率;当溅射功率为80 W、退火温度为320 ℃时,薄膜的电阻率可低至8.6×10~(-4) Ω·cm;退火气氛对薄膜的导电性能有较大影响,真空退火可使吸附氧脱附,大大降低薄膜的方块电阻.而退火温度和退火气氛均对ZnO∶ Al薄膜的透光率没有明显影响,薄膜的透光率在86;以上.
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| 关 键 词： | ZnO∶Al 光电性能 磁控溅射 退火工艺 |
Effects of Heat Treatment Process on Structure and Photoelectric Properties of ZnO: Al Films Deposited at Room Temperature |
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| REN Ming-fang,WANG Hua,XU Ji-wen,YANG Ling.Effects of Heat Treatment Process on Structure and Photoelectric Properties of ZnO: Al Films Deposited at Room Temperature[J].Journal of Synthetic Crystals,2009,38(5):1189-1192. |
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| Authors: | REN Ming-fang WANG Hua XU Ji-wen YANG Ling |
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| Institution: | Department of Information Material Science and Engineering;Guilin University of Electronic Technology;Guilin 541004;China |
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| Abstract: | ZnO∶Al thin films based on Al doped ZnO ceramic target were prepared by non-reactive DC magnetron sputtering at room temperature. The effects of heat treatment process on microstructure, electrical and optical properties of ZnO∶Al films were investigated. The experimental results show that annealing process in vacuum could improve the conductive properties by eliminating lattice deformation and stress, increasing the carrier concentration and the mobility, decreasing electrical resistivities to a value of 8.6×10~(-4) Ω·cm when the sputtering power is 80 W and the annealing temperature is 320 ℃. The annealing process had little effect on the optical transmittance of ZnO∶Al films, which is above 86%. |
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| Keywords: | ZnO∶Al optical and electrical properties magnetron sputtering annealing technology |
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