| 镁合金抛光机理与CMP工艺研究 |
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| 引用本文： | 陈景,刘玉岭,王晓云,王立发,马振国,武亚红.镁合金抛光机理与CMP工艺研究[J].微纳电子技术,2008,45(2):114-117. |
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| 作者姓名： | 陈景 刘玉岭 王晓云 王立发 马振国 武亚红 |
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| 作者单位： | 河北工业大学,微电子研究所,天津,300130 |
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| 摘 要： | 将化学机械抛光(CMP)技术引入到镁合金片(MB2)的抛光中,打破过去镁合金以单一化学或机械加工为主的加工手段,用自制的抛光液对镁合金片进行抛光实验。结果发现,抛光液中加入双氧水易产生胶体,不利于抛光的进行,因此提出无氧化剂SiO2碱性抛光。同时分析了镁合金的抛光机理,抛光中压力、转速和抛光液流量参数对抛光过程的影响,利用Olympus显微镜对抛光前后镁合金表面进行观察,通过合理控制工艺参数,能够得到较佳的镁合金抛光表面,远优于单一的机械加工,为镁合金抛光工艺和进一步研究抛光液的配比奠定了基础。
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| 关 键 词： | 镁合金(MB2) 化学机械抛光 抛光机理 抛光速率 抛光液 |
| 文章编号： | 1671-4776(2008)02-0114-04 |
| 修稿时间： | 2007年9月27日 |
Study of Mg Alloy Polishing Mechanism and CMP Technology |
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| Chen Jing,Liu Yuling,Wang Xiaoyun,Wang Lifa,Ma Zhenguo,Wu Yahong.Study of Mg Alloy Polishing Mechanism and CMP Technology[J].Micronanoelectronic Technology,2008,45(2):114-117. |
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| Authors: | Chen Jing Liu Yuling Wang Xiaoyun Wang Lifa Ma Zhenguo Wu Yahong |
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| Institution: | Chen Jing,Liu Yuling,Wang Xiaoyun,Wang Lifa,Ma Zhenguo,Wu Yahong (Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,hina) |
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| Abstract: | The chemical-mechanical polishing (CMP) technology was introduced into Mg alloy surface ultra-precision process and the single chemical or mechanical process was broken through. The self-made slurry was used to make polishing experiment for Mg alloy. The result shows that it is difficult to carry out polishing for the generated colloid during CMP process, if the slurry contains H2O2. As a result, without the oxidant of SiO2 alkali polishing was put forward. At the same time, the polishing mechanism of Mg al... |
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| Keywords: | Mg alloy (MB2) chemical-mechanical polishing (CMP) polishing mechanism polish rate slurry |
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