Dependence of transient photovoltage characteristics on bias light intensity for HgCdTe-based photovoltaic infrared detector pixel arrays |
| |
Authors: | Haoyang Cui Jundong Zeng Junjie Yang Yongpeng Xu Wei Gao Zhong Tang |
| |
Affiliation: | 1. School of Electronic and Information Engineering, Shanghai University of Electric Power, 2103 Pingliang Road, Shanghai?, 200090, China
|
| |
Abstract: | In this paper, experimental investigation of the photovoltaic effect of metal/semiconductor (M/S) interface in HgCdTe pixel arrays are reported. The transient photovoltaic (TPV) response was measured by using a pulsed laser under illumination of steady bias light. A tendency of polarity inversion from peak-to-valley of TPV was observed with increasing bias light intensity. Model for photovoltage transformation was proposed, and proved by comparing the response behavior before and after removing the aperture for the TPV measurements. The Schottky barrier junction of M/S interface is the key factor for the polarity reversal at different bias light intensity. The results provide an effective method to evaluate the electrode quality of the photodetector directly. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|