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Microscopical studies at cadmium impurities in compound semiconductors |
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| Authors: | A Baurichter M Deicher S Deubler D Forkel J Meier H Wolf W Witthuhn and ISOLDE Collaboration |
| Institution: | a Physikalisches Institut der Universität Erlangen-Nürnberg, 8520, Erlangen, Germany b Fakultät für Physik, Universität Konstanz, 7750, Konstanz, Germany c CERN, PPE-Division, CH-1211, Geneve, Switzerland d Technische Physik, Universität des Saarlandes, 6600, Saarbrücken, Germany e CERN, CH-1211, Geneve, Switzerland |
| Abstract: | Molecule-like defect complexes have been studied at Cd acceptors in the III–V semiconductors GaAs, GaP, InP, InAs, and InSb by PAC spectroscopy. After hydrogen plasma treatment, the formation of Cd-H complexes was observed in all these compounds. Additionally, the formation and stability of Cd-S and Cd-Se pairs in GaAs have been analyzed. |
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