Electronic structure of C co-doped (Ga,Fe)N-based diluted magneticsemiconductors |
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| Authors: | O. Mounkachi A. Benyoussef A. El Kenz E. H. Saidi E. K. Hlil |
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| Affiliation: | (1) Department of Physics, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, People’s Republic of China;(2) The College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100022, People’s Republic of China |
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| Abstract: | We report results of the study on GaN doped with Fe and co-doped with Carbon (C), for acceptors defect, making use of the spin-polarized relativistic Korringa-Kohn-Rostoker coherent-potential approximation method. In order to understand and to explain the half-metallicity and ferromagnetism stability, observed in Ga0.95Fe0.05N with acceptor defects, we calculated the electronic structure and magnetic properties of p-type Ga0.95Fe0.05N. Furthermore, comparison between the electronic structure of the substitutional and interstitial carbon in (Ga, Fe)N is also given. Mechanism of exchange interaction between magnetic ions in Ga0.95Fe0.05N with acceptor defect is investigated. The hyperfine interaction has been calculated for the disordered alloy systems Ga0.95Fe0.05N1-xCx (0.01 ≤ x ≤ 0.08). |
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