Black Phosphorus Quantum Dots |
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| Authors: | Xiao Zhang Prof Haiming Xie Zhengdong Liu Chaoliang Tan Dr Zhimin Luo Dr Hai Li Jiadan Lin Dr Liqun Sun Prof Wei Chen Prof Zhichuan Xu Prof Linghai Xie Prof Wei Huang Prof Hua Zhang |
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| Institution: | 1. Energy Research Institute @ NTU (ERI@N), Interdisciplinary Graduate School, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553 (Singapore);2. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore) http://www.ntu.edu.sg/home/hzhang/;3. National & Local United Engineering Lab for Power Battery, Northeast Normal University, Changchun, Jilin 130024 (China);4. Key Laboratory for Organic Electronics and Information Display & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023 (China);5. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816 (China);6. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore) |
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| Abstract: | As a unique two‐dimensional nanomaterial, layered black phosphorus (BP) nanosheets have shown promising applications in electronics. Although mechanical exfoliation was successfully used to prepare BP nanosheets, it is still a challenge to produce novel BP nanostructures in high yield. A facile top‐down approach for preparation of black phosphorus quantum dots (BPQDs) in solution is presented. The obtained BPQDs have a lateral size of 4.9±1.6 nm and thickness of 1.9±0.9 nm (ca. 4±2 layers). As a proof‐of‐concept application, by using BPQDs mixed with polyvinylpyrrolidone as the active layer, a flexible memory device was successfully fabricated that exhibits a nonvolatile rewritable memory effect with a high ON/OFF current ratio and good stability. |
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| Keywords: | black phosphorus memory devices quantum dots two‐dimensional materials |
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