| Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma |
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| 作者姓名： | 王健 田建柏 熊兵 孙长征 郝智彪 罗毅 |
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| 作者单位： | Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 60244001 and 60536020, the National High Technology Research and Development Programme of China under Grant No 2001AA313130, and the Major State Basic Research Project of China under Grant No TG2000036601. |
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| 摘 要： | Deep InP gratings are etched by C12/CH4/Ar inductively coupled plasma （ICP） at room temperature. A comparison is made between SiNz mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of C12/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10：1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback A1GMnAs-InP laser.
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| 关 键 词： | 光电装置 等离子体物理学 各向异性 分布反馈 |
| 收稿时间： | 2006-03-28 |
| 修稿时间： | 2006-03-28 |
Deep InP Gratings for Opto-Electronic Devices Etched by Cl2/CH4/Ar Inductively Coupled Plasma |
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| WANG Jian,TIAN Jian-Bai,XIONG Bing,SUN Chang-Zheng,HAO Zhi-Biao,LUO Yi.Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma[J].Chinese Physics Letters,2006,23(8):2158-2160. |
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| Authors: | WANG Jian TIAN Jian-Bai XIONG Bing SUN Chang-Zheng HAO Zhi-Biao LUO Yi |
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| Institution: | Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| Abstract: | |
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| Keywords: | 52 77 Bn 81 65 Cf 42 55 Px |
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