High pressure X-ray diffraction study of ReS2 |
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Authors: | Dongbin Hou Jianguo Du Jinyuan Yan Hongyang Zhu |
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Affiliation: | a Department of Mechanical Engineering, Texas Tech University, Lubbock, TX 79409, USA b Institute of Earthquake Science, China Earthquake Administration, Beijing 100036, China c Advanced Light Source, Lawrence Berkeley National Laboratory, MS6R2100, 1 Cyclotron Road, Berkeley, CA 94720-8226, USA |
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Abstract: | The high-pressure behavior of rhenium disulfide (ReS2) has been investigated to 51.0 GPa by in situ synchrotron X-ray diffraction in a diamond anvil cell at room temperature. The results demonstrate that the ReS2 triclinic phase is stable up to 11.3 GPa, at which pressure the ReS2 transforms to a new high-pressure phase, which is tentatively identified with a hexagonal lattice in space group P6?m2. The high-pressure phase is stable up to the highest pressure in this study (51.0 GPa) and not quenchable upon decompression to ambient pressure. The compressibility of the triclinic phase exhibits anisotropy, meaning that it is more compressive along interlayer directions than intralayer directions, which demonstrates the properties of the weak interlayer van der Waals interactions and the strong intralayer covalent bonds. The largest change in the unit cell angles with increasing pressures is the increase of β, which indicates a rotation of the sulfur atoms around the rhenium atoms during the compression. Fitting the experimental data of the triclinic phase to the third-order Birch-Murnaghan EOS yields a bulk modulus of KOT=23±4 GPa with its pressure derivative KOT′= 29±8, and the second-order yields KOT=49±3 GPa. |
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Keywords: | A. Semiconductors C. High pressure C. X-ray diffraction D. Crystal structure D. Phase transitions |
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