Growth of InN thin films on ZnO substrate by plasma-assisted molecular beam epitaxy |
| |
| Authors: | Cheng-Hung Shih Wen-Yuan Pang Chia-Ho Hiseh |
| |
| Institution: | Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC |
| |
| Abstract: | We have studied the microstructure property of InN epitaxial films grown on ZnO substrate by plasma-assisted molecular beam epitaxy. We found that the In2O3 compound was produced on ZnO substrate and many pits were formed on the InN films when InN was directly grown on ZnO substrate with the N/In flux ratio less than 40. We demonstrated that the quality of InN film was significantly improved when the In2O3 layer was used as a buffer to prevent the reaction between In and the ZnO substrate. |
| |
| Keywords: | A Semiconductors A Thin films B Epitaxial growth |
| 本文献已被 ScienceDirect 等数据库收录！ |
