Pressure effect on the electronic and optical properties of the alkali antimonide semiconductors Cs3Sb, KCs2Sb, CsK2Sb and K3Sb: Ab initio study

We present first principles calculations of the effect of pressure on the electronic and optical properties of the alkali antimonides semiconductors K₃Sb, K₂CsSb, KCs₂Sb and Cs₃Sb by means of the full-potential linearized augmented plane wave method within the generalized gradient approximation. The band gap variation is not linear. The crossover pressure values are determined for K₃Sb and K₂CsSb. Under pressure the structures in the optical spectra shift towards higher energies for K₃Sb and KCs₂Sb whereas the threshold energy is lowered for K₂CsSb and Cs₃Sb. The electronic dielectric constant decreases with pressure for K₃Sb while it increases for the other three compounds. Our results indicate that the absorption becomes strong in the UV region for KCs₂Sb and Cs₃Sb.