Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method

Polycrystalline thin film transistors (poly-Si TFTs) were fabricated using the 5-s-rapid joule heating method. The optimum condition of 0.77 J/cm² for crystallization was determined through analysis of transfer characteristics of poly-Si TFTs. The density of the tail-type defect states decreased from 1.4×10¹² to 9.5×10¹¹ cm^-2 and the carrier mobility increased from 300 cm²/Vs to 760 cm²/Vs as the joule heating energy density increased from 0.68 to 0.77 J/cm². The threshold voltage of the drain current ranged between 0.9 and 1.15 V. PACS 85.30.De; 61.72.Bb; 81.10.Jt; 02.60.Cb