The Applicability of Light-Microscopical Methods for the Investigation of Dislocation Structure in Semiconductors

In this paper is demonstrated that the well known and simple light-microscopical methods allow to investigate a variety of defect structure problems and can give more useful informations than generally assumed. A summary of the techniques is given. Preliminary results of the investigations on GaP samples obtained by ultramicroscopy, dark-field illumination, and polarization microscopy are shown for illustration.