| Abstract: | On the basis of the epitaxial layers of SiC (N) grown from vapour phase by the sublimation method in a temperature interval (1900–2200) °C and at nitrogen partial pressures from 4 to 760 Torr has been determined the dependence of the nitrogen content in the epitaxial layers of SiC(N) on the nitrogen partial pressure and the temperature of growing. A thermodynamics analysis of the nitrogen solubility process in silicon carbide has been developed taking account of the electron-hole interaction. The experimental and calculation results, we have obtained, allowed us to determine the partial mol solubility heat of nitrogen in SiC. |
