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ChemInform Abstract: DEPTH PROFILING OF N-TYPE DOPANTS IN SILICON AND GALLIUM ARSENIDE USING CESIUM(+) ION BOMBARDMENT NEGATIVE SECONDARY ION MASS SPECTROMETRY IN ULTRAHIGH VACUUM |
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| Authors: | C. W. MAGEE |
| Abstract: | |
| Keywords: | mass spectra (atoms and molecules) electric properties, superconductors, semiconductors |