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Physical Properties of Pb0.8Sn0.2Te :In Epitaxial Layers |
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| Authors: | G. A. Kaljuzhnaya T. S. Mamedov K. H. Herrmann M. Wendt |
| Abstract: | A study was made of dislocation density, Hall effect, conductivity, and photoeffects in In-doped Pb0.78Sn0.22Te epitaxial layers. From an analysis of RH vs T the existence of resonant as well as deep levels is concluded, dependent on In content and defect structure. Samples with about 0.4 at.% In which are not compensated, exhibit photoresponse as well as luminescence. |
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