| 高功率脉冲对PIN 限幅器的毁伤效应研究 |
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| 引用本文： | 李吉浩.高功率脉冲对PIN 限幅器的毁伤效应研究[J].微波学报,2012,28(S2):315-318. |
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| 作者姓名： | 李吉浩 |
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| 作者单位： | 天线与微波技术国防科技重点实验室，南京电子技术研究所，南京210013 |
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| 摘 要： | 本文针对PIN限幅器在高功率脉冲下的毁伤效应，对PIN限幅器归一化吸收、负载和反射功率与阻抗关系进行了
理论分析，并对高功率脉冲注入下PIN 限幅器的瞬态响应进行了仿真分析，结果表明当输入脉冲上升沿小于5ns，输入功
率大于200mW时，限幅器出现明显的尖峰泄漏现象，并且限幅能力趋于饱和，试验结果也验证了仿真分析结果的有效性。
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| 关 键 词： | 高功率脉冲，PIN 限幅器，毁伤效应 |
Research on HPM Pulse Damage Effect of PIN Limiter |
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| LI Ji-hao.Research on HPM Pulse Damage Effect of PIN Limiter[J].Journal of Microwaves,2012,28(S2):315-318. |
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| Authors: | LI Ji-hao |
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| Institution: | National Key Laboratory of Antenna and Microwave Technology , Nanjing Research Institute of Electronics Technology,
Nanjing 210013, China |
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| Abstract: | This presents HPM pulse damage effect on PIN limiter and theoretically analyzes relations between normalized
absorbed power, load power, reflected power and impedance. Simulation on HPM pulse response of PIN limiter. Result shows
that limiter has a peak power leaking and saturation with input pulse rise time less than 5ns and input pulse power more than
200mW. Experiment result shows that simulation is applicable. |
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| Keywords: | HPW pulse PIN limiter damage effect |
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