在Si衬底上用分子束外延低温生长Ge薄膜

本文报道了室温下淀积的薄层Ge在Si衬底表面上通过加热形成结晶的Ge岛,然后在此“带结构”的衬底表面上用分子束外延(MBE)方法生长Ge薄膜的反射式高能电子衍射(RHEED),俄歇电子能谱(AES)研究结果。X射线双晶衍射的测试结果表明,衬底表面的Ge岛有助于释放外延层的失配应力,提高外延层的晶体质量。关键词：

LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

In this paper, we report the results of RHEED, AES studies of thin Ge film grown on the patterned Si substrates which are formed by room temperature Ge deposition followed with thermal annealing to cluster the deposited Ge into islands. Double crystal X-ray diffraction measurements show that the existence of Ge islands on Si substrate surfaces is effective for releasing the mismatch strain and improving the crystalline qualities of the epilayers then deposited on it.