Hydrophobic modification of SiO2 surface by aminosilane derivatives |
| |
| Authors: | Hidekazu Arase Keiichi Taniguchi Takashi Kai Kazuya Murakami Yohei Adachi Yousuke Ooyama |
| |
| Affiliation: | Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima, Japan |
| |
| Abstract: | New aminosilanes with hydrolysable Si-N bond(s) were prepared by the amination of chlorosilanes and used as hydrophobic modifiers of SiO2 surface. The aminosilanes are rather stable towards hydrolysis in air compared to their chlorosilane analogs. The modified SiO2 was applied as a gate insulator of an organic thin-film transistor with a vapor-deposited film of pentacene as the active material. The transistor with the aminosilane-modified SiO2 showed two- to threefold higher hole mobility than the device with bare SiO2. |
| |
| Keywords: | Hydrophobic surface modification aminosilane silane coupling agent siloxane bond OTFT |
|
