Growth of Silicon Nanowires by Heating Si substrate |
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作者姓名: | 邢英杰 俞大鹏 |
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作者单位: | [1]DepartmentofElectronics,PekingUniversity,Beijing100871 [2]DepartmentofPhysics,PekingUniversity,Beijing100871 |
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摘 要: | Amorphous silicon nanowires were prepared by heating an Si substrate at high temperatures using an Ni (or Au) catalyst.The nanowires have a diameter of 10-40nm and a length of up to several tens of micrometres.Unlike the well-known vapour-liquid-solid mechanism,a solid-liquid-solid mechanism appeared to control the nanowire growth.The heating process had a strong influence on the growth of silicon nanowires.It was found that ambient gas was necessary to grow nanowires.This method can be used to prepare other kinds of nanowires.
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关 键 词: | 硅生长 硅毫微线 硅衬底 |
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