Electrical conductivity,thermoelectric power and figure of merit of doped Bi-Sb tapes produced by melt spinning technique |
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Authors: | T K Dey |
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Institution: | (1) Cryogenic Engineering Centre, Indian Institute of Technology, 721 302 Kharagpur, India |
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Abstract: | Temperature dependence of electrical conductivity and thermoelectric power are presented for In and Pb doped Bi + 8.28 at
% Sb quenched tapes between 77 and 300K. The results are explained in terms of model for disordered semiconductors. Analysis
of our data on electrical conductivity indicates the presence of a temperature independent part and a strongly temperature
dependent part. While theT independent part originates from band conduction, theT dependent component could be understood considering the presence of localized states. Thermoelectric figure-of-merit of these
tapes are also measured at 300K, which shows a large enhancement (∼40%) over that reported earlier on thin Bi-Sb films. This
suggests that doped Bi-Sb quenched tapes may be considered as a candidate for material in producing economic and light weight
thermoelectric devices. |
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Keywords: | Bismuth-antimony alloy melt spinning technique thermoelectric power figure-of-merit nearest neighbour hopping localized states |
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