| 抗辐射加固版图技术的性能比较 |
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| 引用本文： | 吕灵娟,刘汝萍,林敏,桑泽华,邹世昌,杨根庆.抗辐射加固版图技术的性能比较[J].半导体学报,2014,35(6):065006-4. |
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| 作者姓名： | 吕灵娟 刘汝萍 林敏 桑泽华 邹世昌 杨根庆 |
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| 摘 要： | Total ionizing dose （TID） effect and single event effect （SEE） from space may cause serious effects on bulk silicon and silicon on insulator （SOl） devices, so designers must pay much attention to these bad effects to achieve better performance. This paper presents different radiation-hardened layout techniques to mitigate TID and SEE effect on bulk silicon and SOl device and their corresponding advantages and disadvantages are studied in detail. Under 0.13μm bulk silicon and SOl process technology, performance comparisons of two different kinds of DFF circuit are made, of which one kind is only hardened in layout （protection ring for bulk silicon DFF, T-gate for SO! DFF）, while the other kind is also hardened in schematic such as DICE structure. The result shows that static power and leakage of SOI DFF is lower than that of bulk silicon DFF, while SOI DFF with T-gate is a little slower than bulk silicon DFF with protection ring, which will provide useful guidance for radiation-hardened circuit and layout design.
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| 关 键 词： | 性能对比 抗辐射 技术 DFF 绝缘体上硅 单粒子效应 设计人员 性能比较 |
Performance comparison of radiation-hardened layout techniques |
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| Lu Lingjuan,Liu Ruping,Lin Min,Sang Zehua,Zou Shichang,Yang Genqing.Performance comparison of radiation-hardened layout techniques[J].Chinese Journal of Semiconductors,2014,35(6):065006-4. |
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| Authors: | Lu Lingjuan Liu Ruping Lin Min Sang Zehua Zou Shichang Yang Genqing |
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| Institution: | The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and InformationTechnology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and InformationTechnology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and InformationTechnology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and InformationTechnology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and InformationTechnology, Chinese Academy of Sciences, Shanghai 200050, China;The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China |
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| Abstract: | total ionizing dose effect single event effect bulk silicon silicon on insulator radiation-hardened layout techniques |
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| Keywords: | total ionizing dose effect single event effect bulk silicon silicon on insulator radiation-hardened layout techniques |
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