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Point-contact spectroscopy on SmB6, TmSe,LaB6 and LaSe
Authors:I. Frankowski  P. Wachter
Affiliation:Laboratorium für Festkörperphysik, ETHZ Hönggerberg, 8093 Zürich, Switzerland
Abstract:We measured the dynamic resistance dU/dI (U) and its derivative d2U/dI2(U) of point contacts with intermediate valent SmB6 and TmSe and their integer valent reference compounds LaB6 and LaSe at liquid helium temperatures. While dU/dI(U) for point contacts with LaB6 and LaSe did not show any anomalous structures, for SmB6 and TmSe a strong resistance peak at zero voltage was observed with a characteristic width of ~ 5 mV for SmB6 and ~ 2.5 mV for TmSe.
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