Determination of the deformation potential of shallow donors in silicon |
| |
Authors: | A.E. Belyaev R.M. Vinetsky O.P. Gorodnichii |
| |
Affiliation: | The Institute of Semiconductors, Acad. Sci. Ukr. SSR, Kiev, USSR |
| |
Abstract: | The stress dependence of the energy of the ground state of group V impurities (P, Sb) in silicon was investigated by measurement of the Hall effect in a wide range of pressures. A conclusion was reached that the deformation potential of the lowest impurity state of shallow donors (Ξ1u) in silicon differs from the deformation potential of the conduction band (Ξu), the value of this difference being dependent on the type of the impurity. According to our data, the most probable values for () are 0.12 eV for phosphorous-doped silicon and 0.06 eV for antimony-doped silicon. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|