Determination of the deformation potential of shallow donors in silicon

The stress dependence of the energy of the ground state of group V impurities (P, Sb) in silicon was investigated by measurement of the Hall effect in a wide range of pressures. A conclusion was reached that the deformation potential of the lowest impurity state of shallow donors (Ξ¹_u) in silicon differs from the deformation potential of the conduction band (Ξ_u), the value of this difference being dependent on the type of the impurity. According to our data, the most probable values for ($\text{Ξ}{}_{\mathrm{u}}\text{ Ξ}{}^1{}_{\mathrm{u}}$) are 0.12 eV for phosphorous-doped silicon and 0.06 eV for antimony-doped silicon.