Dark-current relaxation in EuGa2S4 single crystals |
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| Authors: | OB Tagiyev GM Niftiyev TKh Azizov |
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| Institution: | Institute of Physics, The Azerbaijan SSR Academy of Sciences, Baku, USSR |
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| Abstract: | The results of the investigation of dark-current relaxation in EuGa2S4 single crystals are reported. The depth and concentration of the traps are found to be Et = 0.79 eV and Nt = 1.64 × 1014 cm?3, respectively.The charge accumulation region (dc = 3.3 × 10?5 cm) and contact capacitance (Cc = 1.23 × 10?10 F) are also estimated. |
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