Optical absorption by neutral bound excitons

In this note we determine the oscillator strengths for the dipole absorption of neutral bound excitons in direct gap semiconductors, using our previously obtained 35-term Page and Fraser type wave function, and taking into account the detailed electronic structure as well as the electron-hole exchange interaction.The envelope part of the oscillator strengths varies considerably with the electron-hole mass ratio $\text{σ =}\text{m}{}^1{}_{\mathrm{e}}\text{m}{}^1{}_{\mathrm{h}}$, and is maximum for the (D⁰, X)- complex when σ = 0.4. For typical σ-values (σ? 0.1–0.2), . But when σ approaches zero, the overlapping of the electron and the hole envelope wave functions of the (A⁰,X)-complex decreases progressively so that the oscillator strength also decreases and tends to zero.In the case of zinc-blende materials (T_d) and positive spin-orbit coupling at $\text{k}\text{= 0}$, we confirm that the line strength for transitions to or from $\text{J =}\text{1}\text{2}\text{(Γ}{}_6\text{)}$ or $\text{J =}\text{5}\text{2}\text{(Γ}{}_7\text{+ Γ}{}_8\text{)}$ level of the (A⁰, X)-complex is equal to one quarter of the line strength to or from the $\text{J =}\text{3}\text{2}\text{(Γ}{}_8\text{)}$ level.In the case of CdS, where our computed values are only in qualitative agreement with the experimental values, we discuss the use of the phenomenological result of Rashba.