High pressure experiments on AlxGa1−xAs-GaAs quantum-well heterostructure lasers |
| |
| Authors: | SW Kirchoefer N Holonyak K Hess DA Gulino HG Drickamer JJ Coleman PD Dapkus |
| |
| Institution: | Electrical Engineering Research Laboratory and Materials Research Laboratory University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;School of Chemical Sciences and Materials Research Laboratory University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;Rockwell International, Electronics Research Center Anaheim, California 92803, USA |
| |
| Abstract: | Hydrostatic pressure experiments on AlxGa1?xAsGaAs quantum-well heterostructure (QWH) laser diodes are described. Data are presented giving ～11.5meV/kbar for the bandgap vs. pressure coefficient at lower pressures, with a change to 8.5–9meV/kbar at higher pressures. We suggest that this behavior is caused by biaxial and shear stresses in the active region induced by doping or composition mismatch relative to the confining layers, or between the n and p confining layers themselves. A model consistent with the experimental data is presented. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
