Photoluminescence studies of exciton-ionized donor complexes in high pusity epitaxial GaAs

We report the first observation of three radiative transitions associated with excitons bound to three different residual ionized donors in high purity undoped vapor phase epitaxial (VPE) GaAs at liquid helium temperature. The values of the localization energies (E_l) of excitons bounds to these ionized donors were measured. We also determine simultaneously, the ionization energies of these donors using excited state transitions of exciton-neutral donor complexes as reported earlier. The variation of the localization energy (E_l) as a function of the donor binding energy (E_D) is plotted and a linear dependence described by E_l = ? 2.22 + 0.72E_D is observed.