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Electronic energy levels of point defects at the GaSb (110) surface |
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| Authors: | R.E. Allen J.D. Dow H.P. Hjalmarson |
| Affiliation: | Department of Physics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A. |
| Abstract: | Deep energy levels are predicted for substitutional sp3-bonded defects at the (110) surface of GaSb. |
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