Photoemission from laser excited semiconductors: Dynamic response of the electronic structure in Si |
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| Authors: | W Eberhardt R Brickman A Kaldor |
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| Institution: | Department of Physics and Laboratory for Research on the Structure of Matter University of Pennsylvania, Philadelphia, Pennsylvania 19104, U.S.A.;Exxon Research Laboratories, Linden, New Jersey 07036, U.S.A. |
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| Abstract: | Using angle-resolved photoemission in coincidence with a pulsed Nd:Yag laser beam (hνL = 2.33 eV), we have studied the dynamic rearrangement of the electronic states in Si in the presence of a large number of electron hole pairs created by laser photon excitation. We observed considerable changes in the valence band structure, a renormalization of the bandgap, and a satellite peak in the 2p core level emission due to more effective core hole screening. |
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