首页 | 本学科首页   官方微博 | 高级检索  
     检索      


On the concentration dependence of the direct and indirect band gaps of substitutional GaPxAs1−x alloys
Authors:RL Sakar  S Chatterjee
Institution:Department of Physics, University of Kalyani, India;Department of General Physics and X-rays, Indian Association for the Cultivation of Science, Calcutta 700 032, India
Abstract:The variation of the direct and indirect band gaps of the substitutional GaPxAs1?x alloy with concentration has been studied by the KKRZ-ATA method. It is found that the gaps plotted against concentrations have little bowing on the low concentration side of GaP. This bowing has been discussed in the light of existing theoretical and experimental results.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号