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Effects of ion implantation on intermediate range order: IR spectra of silica |
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| Authors: | RH Magruder III SH Morgan RA Weeks RA Zuhr |
| Institution: | a Dept. of Physics, Belmont College, Nashville, TN, USA b Dept. of Physics, Fisk University, Nashville, TN, USA c Dept. of Materials Science and Engineering, Vanderbilt University, Nashville, TN, USA d Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA |
| Abstract: | The reflectance spectra of ion implanted SiO2 glasses has been measured from 5000 cm?1 to 400 cm?1. The silica was implanted with Ti, Cr, Mn, Fe, Cu and Bi to nominal doses ranging from 1×1015 ions/cm2 to 1.2×1017 ions/cm2 at an energy of 160 keV and currents of approximately 2.6 μA/cm2. Changes in the intensity of the 1232 cm?1 and 1015 cm?1 vibrational modes are attributed to changes in the intermediate range order (IRO) and to changes in the concentration of non-bridging oxygen (NBO) defects in the implanted layer. These changes are ion and dose dependent. The differing effects on IRO and NBO are attributed to the chemical interaction of the implanted ions with the substrate. |
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